NSN Part 201842-001 With NSN 5962-01-199-9161 by Bae Systems Information And Electronic Systems Integration I | Request a Quote

Mfg Part Number: 201842-001	Alternate P/N: 201842001	NSN : 5962-01-199-9161
NIIN : 011999161	CAGE Code : 81413	Manufacturer: Bae Systems Information And Electronic Systems Integration I
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

If you are looking for Microcircuit Memory components with the NSN part 201842-001, we have your back at After Market Aviation Spares. The NSN 5962-01-199-9161 has been produced by Bae Systems Information And Electronic Systems Integration I and is available for purchase on our website. If you want to learn more about this NSN part number 201842-001, we invite you to fill out our RFQ form. Once we receive the form, a dedicated expert from our team will reach out to you with a personalized quote within 15 minutes or less. At After Market Aviation Spares, our dedicated account managers are committed to helping you find the right products at the best prices available in the market.

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NSN Information for Part Number 201842-001 with NSN 5962-01-199-9161, 5962011999161

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-199-9161 Item Description: Microcircuit Memory	5962	011999161	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
201842-001	1	2	3

Characteristics Data of NSN 5962-01-199-9161, 5962011999161

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 290 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 210 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING855 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONRECEIVING SETCOUNTERMEASURES ANALR-56C
MEMORY	CBBL	FEATURES PROVIDEDMONOLITHIC AND ERASABLE AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND WENABLE AND BIDIRECTIONAL
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN21 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MINIMUM POWER SOURCE AND 6 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC300 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 300 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TEST	TEST DATA DOCUMENT81413-201842 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT