NSN Part 1372FW1104-001 With NSN 5962-01-373-5204 by Bae Systems Information And Electronic Systems Integration I | Request a Quote

Mfg Part Number: 1372FW1104-001	Alternate P/N: 1372FW1104001	NSN : 5962-01-373-5204
NIIN : 013735204	CAGE Code : 72314	Manufacturer: Bae Systems Information And Electronic Systems Integration I
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

If you are looking for Microcircuit Memory components with the NSN part 1372FW1104-001, we have your back at After Market Aviation Spares. The NSN 5962-01-373-5204 has been produced by Bae Systems Information And Electronic Systems Integration I and is available for purchase on our website. If you want to learn more about this NSN part number 1372FW1104-001, we invite you to fill out our RFQ form. Once we receive the form, a dedicated expert from our team will reach out to you with a personalized quote within 15 minutes or less. At After Market Aviation Spares, our dedicated account managers are committed to helping you find the right products at the best prices available in the market.

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NSN Information for Part Number 1372FW1104-001 with NSN 5962-01-373-5204, 5962013735204

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-373-5204 Item Description: Microcircuit Memory	5962	013735204	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
1372fw1104-001	5	2	3

Characteristics Data of NSN 5962-01-373-5204, 5962013735204

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 260 INCHES MINIMUM AND 1 280 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 290 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEPAL
MEMORY	FEAT	SPECIAL FEATURESELECTROSTATIC DISCHARGE SENSITIVE ALTERED ITEMMADE FROM 5962-8686401LAPROGRAMMED PER 1058-U37 JEDFD137200104-001CHECKSUM 36C6 NHA PN 1372AE1058
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
MEMORY	ADAU	BODY HEIGHT0 180 INCHES MINIMUM AND 0 200 INCHES MAXIMUM
MEMORY	AGAV	END ITEM IDENTIFICATIONEO LOROPS
MEMORY	CRTL	CRITICALITY CODE JUSTIFICATIONFEAT
MEMORY	CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROGRAMMED
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CBBL	FEATURES PROVIDEDBURN IN AND COMPATIBLE CMOS AND ERASABLE AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND HERMETICALLY SEALED AND WCLOCK
MEMORY	CQZP	INPUT CIRCUIT PATTERN22 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC